Multiple Node Upset in SEU Hardened Storage Cells
SEU 加固存储单元中的多节点翻转

We study the problem of multiple node upset (MNU) using three-dimensional device simulation.The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.We compare the MNU with multiple bit upset (MBU), and find that their characteristics are different.Methods to avoid MNU are also discussed.