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半导体学报 2008
Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs
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Abstract:
A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.The electrical characteristics of this device with the effective gate length scaled down to 25nm are simulated.When the Ge content reaches 30%,by the adoption of a single-gate(SG) control mechanism,the drive currents are improved by 43% and 67%,respectively,for the strained-Si n-MOSFET and the strained-SiGe p-MOSFET over their unstrained counterparts.By adopting double-gate(DG) control mechanisms,the simila...
