Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
金属有机化学气相沉积法生长纯闪锌矿结构P型砷化镓纳米线

Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In the high II/III ratio range (II/III>9.1%), there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III = 0.2%, the doping concentration is about 8 × 1018 cm-3.