Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature
室温下nc-Si/SiO2多层膜结构中的共振隧穿现象

Nc-Si/SiO2 multilayers were fabricated on silicon wafers in plasma enhanced chemical vapour deposition system using the in situ oxidation technology, followed by the three-step thermal treatments. Carrier transportation at room temperature is characterized by current voltage measurement and negative different conductance can be observed both under forward and negative biases, which is explained by resonant tunnelling. The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO2 sublayers. And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias. Energy band diagram and equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.