An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings
具有屏蔽环结构的LDMOS漂移区表面电场分布模型

An analytical model of an LDMOSFET with a shield ring is established according to the 2D Poisson equation. Surface electrical field distribution along the drift region is obtained from this model and the influence of shield length and oxide thickness on the electrical field distribution is studied. The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data.