Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
AlGaN/GaN层叠结构插入层改善氮化镓基发光二极管抗静电性能研究

Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.