Stoichiometry in SI-GaAs Bulk Materials by Triple Axis Mode X-Ray Diffraction Measurements
X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比

The lattice parameters of SI GaAs are accurately measured by triple axis mode X ray diffraction method.The stoichiometry in SI GaAs bulk materials is calculated based on the model of the interstitial pairs for describing excess arsenic in GaAs.Triple axis mode X ray diffraction measurements are non destructive and high precision.The reasons of affecting the lattice parameters of SI GaAs are discussed.