Simulation study of new 3-terminal devices for high speed STT-RAM
新型三端自旋转移扭矩随机存储器器件的模拟研究

To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.