Characterization of Metallic Impurity Contamination During High Dose Implantation of Oxygen into Silicon Using ICP-AES
应用ICP-AES表征高剂量氧注入过程中的金属污染

The characterization by means of inductively coupled plasma atomic emission spectroscopy (ICP AES) for metal impurity contamination produced during the high dose oxygen ion implantation for fabricating SIMOX SOI materials is investigated.The effect for the reduction of the contamination is studied by the methods of strong acid cleaning and SiO 2 film covering.It is found that high dose O + implantation brings metal contaminations mainly including Al,Ar,Fe,Ni.But strong acid cleaning after implantation effectively reduces these metal impurity of the surface silicon layer,especially Al,and 60 nm SiO 2 protecting film on silicon for implantation can cut down half of the metal contamination.