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半导体学报 2000
Fabrication of Enhancement Mode GaN Metal-Insulator-Semiconductor Field Effect Transistor
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Abstract:
Recently,a numberofpapers on Ga N-based field-effecttransistors(FETs) have beenreported.The metal-insulator-semiconductor technology is widely adopted in manyapplications since it can provide the high DC input impedance,large gate voltage swings,norm...