OTFT with Bilayer Gate Insulator and Modificative Electrode
具有双绝缘层和修饰电极的薄膜场效应晶体管

An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.