Electrical Properties and Photoluminescence of P-CdZnTe Irradiated by High-Energy Ar+
高能Ar~+辐照P型CdZnTe的电学特性和光致发光

Ar + with energy of 2GeV and fluences of 10 10 -10 13 cm -2 are used to irradiate P Cd 0.96 Zn 0.04 Te.The measurement of electrical properties and photoluminescence is carried out on the samples,which are nonirradiated and exposed to various ion flences,respectively.The densities of the acceptor type defects and scattering centers are elevated after the irradiation,which result in the increase in the carrier (hole) concentration and decrease in carrier mobility,respectively.With the ion fluence increasing,the carrier mobility decreases faster than carrier concentration increases.Therefore,the material resistance increases greatly.