Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography
利用电子束光刻制备晶面依赖的硅纳米结构

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique.This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution.The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm.Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.