An Analytical Temperature-Dependent Kink Effect Model of PD SOI NMOSFET
PD SOI NMOSFET翘曲效应的温度模型

An analytical temperature dependent kink effect model of PD(Partially Depleted) SOI NMOSFET are described,whose physical structure consists of a top NMOSFET and a bottom parasitical BJT.Based on the dynamic balance between the currents flowing through the body emitter and drain body junctions at a given temperature,it is found when the dynamic balance conditions are satisfied,the hole accumulation generated by impact ionization gets saturated.Through the analytical iteration,the voltage drop of body emitter junction and all current components through the body emitter and drain body junctions are obtained.Thus,the analytical temperature dependent model of the kink is derived and experimentally verified.The simulated results agree with our experimental results very well.