Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation
基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性

MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.