Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal
非掺杂LEC砷化镓晶体中砷沉淀和位错关联性质

Using the laser scattering method to measure a polished GaAs wafer,we find that there are four aggregation centers of arsenide precipitation in a GaAs crystal grown in a special thermal field1] and the aggregation centers are at precisely the positions where the dislocation density is at a minimum.In this article,we examine the correlation between the precipitation distribution of arsenide and the dislocations.We also explain what leads to the formation of the four arsenide precipitation aggregation center...