Growth and Characterization of HgCdTe Compositional Heterojunctions
HgCdTe组分异质结的生长与表征

The HgCdTe epilayers reported here were double-layers compositional heterojunctions grown by Te-rich liquid phase epitaxy in a horizontal slider system.The substrates adopted were (111) oriented CdZnTe with about 4% Zn.The epilayers were evaluated by the chemical staining method and infrared transmission spectra measurements.A phenomenological model was also established to characterize the profile of the Cd composition along the growth direction in the HgCdTe epilayer.The results of the electrical measurements showed that the carrier mobility of the long-wave layer beneath the double-layer sample was slightly higher than that of the single-layer sample grown with almost the same conditions.The reason for the increase of the mobility can be ascribed to the passive effect of the middle-wave cap layer.