Reduction of Stacking Fault Density in Cubic GaN Epilayers via Epitaxial Lateral Overgrowth
用侧向外延生长法降低立方相GaN中的层错密度

Epitaxial lateral overgrown (ELOG) cubic GaN (c-GaN) on patterned SiO_2/GaN/GaAs(001) substrates by metalorganic vapor phase epitaxy (MOVPE) is investigated using transmission electron microscope (TEM) and scanning electron microscope (SEM).TEM observations show a substantial reduction of stacking fault density in ELOG c-GaN,compared to that in conventional two-step grown c-GaN.The reduction mechanism of stacking faults in cubic GaN layers via lateral epitaxy is discussed.