Simulation Analysis of the Transport Performance of PLED
聚合物发光器件中输运特性的模拟分析

A negative resistance phenomenon and a "hesitancy effect",which is similar as that in inorganic semiconductor devices,are found in polymer light emitting devices (PLED).An inner reverse barrier is simulated with the I-V curves,as shows that the negative resistance phenomenon is caused by the break down of the reverse barrier.Using scanning applied bias measurement,the trap states in polymer and the charged status in the trap states is considered to be the major origin of the hesitancy effect.The transport performance of PLED can also be dominated by the low field contact characteristics.I-V characteristics are in good agreement with Fowler-Nordheim tunneling model if the low field contact characteristic is non-Ohmic contact.Otherwise,the I-V characteristics are in good agreement with the trapped charge limited current model.