Calculation of Current Gain of Heterojunction Bipolar Transistor with Emitter-Edge Thinning Designv
带有发射极边减薄结构的异质结双极晶体管直流电流增益的计算

The conception of emitter edge offset voltage of HBT with emitter edge thinning design is proposed and introduced into the Gummel Poon model to calculate the current gain of device. Although the method is quite simple, the results agree quite well with the published experimental data, which fully justifies the introduction of the new conception. One of the results of our calculation shows that the thin emitter design is as effective as the emitter edge thinning design to enhance the current gain. Our calculation gives an insight into the design of high performance HBT.