Modeling on 2-D Direct Tunneling Current in Ultra-Thin Oxide nMOSFET''''s Considering Quantum Mechanics
考虑量子力学效应的超薄栅氧nMOSFET''s直接隧穿电流二维模型

Modeling of DT(direct tunneling) current in ultra- thin gate oxide n MOSFET's is researched.Quantized energy lev- els under the high electron field are calculated with the modified Airy function(MAF) m ethod and the tunneling probability of electrons through the gate oxide is obtained through the modified WKB(MWKB) method.From these the distribution of DT current is computed.2 - D sim ulation of MOSFET's is realized in this m odel,and it can be used to sim ulated device status under various biases.Com parison of sim ulating results with experimental data verifies the validity of the m odel.And the efficiency is much higher than the complete analytical m ethod.With this model the gate DT current characteristics of deep- m icron MOS devices can be predicted with satisfaction.