Effect of Surface State and S/D Resistance on Characteristics of 6H-SiC PMOSFET
表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响

A m odel of the interface state density distribution near by valence band is presented.The dependence of the thresh- old voltage on temperature,C- V characteristics and the transfer characteristics for 6 H - Si C PMOS devices is predicted exactly with this m odel.Theoretical C- V curve is obtained by calculating the Poisson equation num erically considering the effects of field- induced ionization.The sheet resistances and contact resistances for p+- type Si C source/drain region are significantly high,so they m ust be considered when the drain current in strong inversion is calculated.