Breakdown Protection Characteristics for F and N Implanted Ultra-Thin Gate Oxide
不同工艺超薄栅氧化层的抗击穿特性

The breakdown protection characteristics of fluorination and nitrification implanted ultra thin gate oxide are investigated.The experimental data show that F ions or N ions introduced into thermal SiO 2 oxide can improved its breakdown characteristics.F ions or N ions can decrease the oxide charges and interface states induced by process.The breakdown protection characteristics of the nitrification implanted thin gate oxide is better than the fluorination thin gate oxide.