A Short-Channel SOI MOSFET Model Considering Total Dose Effects
短沟道SOI MOSFET总剂量辐照效应模型

A new approach is proposed to model the total dose effects on silicon-on-insulator (SOI) devices for the purpose of circuit simulation.The fully continuous compact SOI MOSFET model can automatically account for the correct body depletion condition,without assuming a priori charge partitioning or constant surface potential.It can also account for the transition between FD and PD behavior that occurs in the practical devices.The model is validated by the comparative result between the simulated and measured post-radiation device characteristics of thin-film SOI MOSFETs fabricated on SIMOX wafers.