A New Method of Measuring Plasma Edge Damage
一种新的等离子体边缘损伤的测量方法

During the plasma etching of poly silicon,owing to the direct exposure of gate edge to plasma,the plasma edge da mages by UV ray will occur at the corner of the gate,including a large number of interface states and oxide traps.The interaction among edge damage,position dependent,antenna ratio and their impact on device reliability is discussed.An accurate charge pumping technique,namely low frequency local CP measurement,is used to characterize the resultant edge damage.The result of experiment covers the information on slow and fast interface states,oxide traps,so it can evaluate the edge damage produced in the process.A compact method is proposed for evaluating the gate edge damage of the thin gate MOSFET.