Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOSStructures Under Constant Pressure Stress
超薄栅MOS结构恒压应力下的直接隧穿弛豫谱

With the rapid scaling down of MOS devices,the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.Based on the method of proportional difference operator and relaxation spectroscopy technique,a new relaxation spectroscopy technique,Direct Tunneling Relaxation Spectroscopy (DTRS) is presented for the ultrathin gate oxide MOS structure under the direct tunneling stress,which has the same advantages of OCRS technique,direct,fast and convenient.It can separate and characterize different traps in an ultra-thin direct tunneling gate oxide,and extract the parameters of an oxide trap,such as the generation/capture cross section and density.It is a useful tool to study the mechanism of degradation in the ultra-thin MOSFET under direct tunneling stress.