Intermixing of Asymmetrical Coupling Double Quantum Well via Combinatorial Ion Implantation with Photo-Modulated Reflectance Spectrum
组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱

GaAs/AlGaAs asymmetrical coupling double quantum well (ACDQW) has been grown with molecule beam epitaxy (MBE).With combinatorial implantation methods,several areas with different implantation ion of As + and H + and different ion doses have been obtained on only a single substrate.Without rapid thermal annealing procedure,the maximum difference of transition energy in sub-bands is found to be 50meV from the photo-modulated reflectance spectra.