Study on Nitridation of Thin Gate SiO_2 Using Nitrogen Ion Implantation
离子注入氮化薄SiO_2栅介质的特性

The nitridation technique of the thin gate SiO 2 is reported by using the nitrogen ion implantation through the poly silicon gate.It shows that the thin gate SiO 2 after nitridation can effectively suppress the boron penetration.The generation rate of the charge traps under a positive/negative FN stress and the slow state under the positive FN stress are significantly improved.The charges to breakdown of the nitrided thin gate SiO 2 increase 20%,compared with the conventional ones.