Self-Aligned Structure AlGaAs/GaAs HBT with High Power Density
高功率密度自对准结构AlGaAs/GaAs异质结双极晶体管

A self aligned technology has been developed and applied to AlGaAs/GaAs heterojunction bipolar transistors using wet etch and sidewall techniques.The DC current gain is more than 20,the current gain cutoff frequency, f T,is more than 30GHz and the maximum oscillation frequency, f max ,is more than 50GHz.The CW power measurements show that output power of 100mW(output power density:6 67mW/mm)with power added efficiency(PAE)of 61 4% at 1dB gain compression has been achieved from a single finger HBT and that output power of 112mW(output power density:7 48mW/mm)with PAE of 67% can be achieved at the power saturated point.