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半导体学报 1989
Influence on Etch Rates by Magnetic Field in Reactive Ion Etching
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Abstract:
SiO_2 etching characteristics have been investigated by use of our magnetron reactive ionetching experimental apparatus Under the condition of magnetron discharge the etch rate ofSiO_2 is increased by 6 to 10 times employing CHF_3 In the mean while,the plasma selfbias vol-tage is reduced to one half.
