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半导体学报 1989
Study on Kinetic Process of Silicon Film Deposited by Laser Plasma
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Abstract:
The process of film deposition by laser plasma is studied.The energy of laser,gas pres-sure and temperature of substrate dependence of deposition rate are measured.At the same timethe basic kinetic process in deposition is studied by OES and OLDI. Finally, the model of de-position is suggested based on the experiment results.