Laser-induced Crystallization Behavior of the Sputtered Ge2Sb2Te5 Film
激光致溅射沉积Ge2Sb2Te5薄膜的结晶行为研究

The crystallization behavior of sputtered Ge2Sb2Te5 films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc's signal-to-noise ratio. The phase transformation from FCC to HCP doesn't occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge2Sb2Tes film's crystallization fraction.