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OALib Journal期刊
ISSN: 2333-9721
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Physical Properties, Bulk Growth, and Applications of SiC Single Crystal
SiC单晶的性质、生长及应用

Keywords: silicon carbide,crystal,growth,physical property,semiconductor device
碳化硅
,单晶,半导体器件,晶体生长,PVT法

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Abstract:

This article reviewed on the physical properties, the crystal structure, the growth methods, and the applications of the SiC single crystal The preparation of the SiC single crystal by sublimation method was introduced in detail The defects of SiC single crystal caused in the PVT process were discussed

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