Performance of Al/AlN Substrate
铝/氮化铝电子陶瓷基板的制备及性能的研究

In this work, by die-casting-bonding process, in 948-1098K and N2 atmosphere, Al/AlN substrate was produced successfully. The bonding strength of Al and AlN substrate tested by mechanic testing equipment was more than 15.56MPa; The micorstructure of Al/AlN interface was investigated by SEM and microscope. The results show that there is nothing produced in the interface of Al/AlN, the crystal of aluminium grows on the surface of AlN directly, the bonding temperatures have no influence on Al/AlN interface strength.