Preparation and photoluminescence study of patterned substrate quantum wires
图形衬底量子线生长制备与荧光特性研究

GaAs /AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom,which is a triangle of about 60 nm in width and 14 nm in height. Two peaks at 793. 7 nm and 799. 5 nm of photoluminescence spectrum at 87 K verified the existence of quantum wires. Theoretical calculation gives 8 meV blue shift,which is proved to be casued by lateral confi...