The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra
X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究

采用低温分子束外延法(LT-MBE)制备出Ga0.946Mn0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga0.946Mn0.054As薄膜性质的主要缺陷Mn间隙原子(MnI)和As反位原子(AsGa).实验结果表明,在较低生长温度(TS=200℃)下Ga0.946Mn0.054