Improved properties of light emitting diode by rough p-GaN grown at lower temperature
p型GaN低温粗化提高发光二极管特性

GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN : Mg materials were studied.When the molar ratio of CP_2 Mg and TMGa is between 1.4 × 10~(-3)and 2.5 × 10~(-3), the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly.When the molar ratio is 2.5×10~(-3), the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser.Taking the p-GaN layer with molar ratio of CP_2 Mg and TMGa of 2.5×10~(-3) as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.