High mobility polymer thin-film transistors
高迁移率聚合物薄膜晶体管

Polymer-based thin film transistors (PTFTs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFTs with a surface modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm~2//(Vs) and the on/off ratio higher than 10~5 .