Deposition of P-type no-SiC:H thin films with subtle carbon incorporation for applications in p-i-n solar cells
微量掺碳nc-SiC:H薄膜用于p-i-n太阳电池的窗口层

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC:H thin film with optical gap of 1.92eV and activation energy of 0.06eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC:H /a-Si:H solar cells have been successfully prepared with a V_ oc of 0.94eV.