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物理学报  2004 

Study of self-erasing of recording process in Zn:Fe:LiNbO3 with the double-carrier four-trap model
利用双载流子四陷阱模型解释Zn:Fe:LiNbO3晶体记录过程中的自擦除现象

Keywords: double-carrier four-trap model,self-erasing,charge-hole competition,angle multiplex
双载流子四陷阱模型
,自擦除,电子-空穴竞争,角度复用

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Abstract:

Photorefractive properties of Zn:Fe:LiNbO3 crystals were compared with Fe:LiNbO3 crystals. We described the photoconduction and diffraction efficiency as a function of incident light intensity. The self-erasing of recording process in the Zn:Fe:LiNbO3 crystal is observed. We found that the diffraction efficiency of the crystal increased to a saturation value and then decreased as recording time increases. The phenomena were explained by the double-carrier four-trap model. A suit able exposure schedule is chosen to realize the angle-multiplexed volume holographic storage. We have stored 30 images in the same volume of the crystal.

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