IN-SITU PHOTO-MODULATED REFLECTANCE STUDY ON GaAs/AlxGa1-xAs SINGLE SURFACE QUANTUM WELLS
GaAs/Al1-xAs表面单量子阱原位光调制反射光谱研究

We have studied the optical properties of surface quantum wells with different width of wells (5nm and 10nm) by means of In-situ photo-modulated reflectance(PR) spectroscopy on a molecular beam epitaxy system. The surface quantum well is confined on one side by the vacuum and on the other side by AlxGa1-xAs barrier. In experiments, we have observed clearly the transitions between the confined heavy and light hole states to the confined electron states. The transitions of the excited states in 10nm surface quantum well are observed at first. The effects of the surface on the confined states have been well studied by combination of the PR spectra and the effective mass approximation theory.