LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE
分子束外延调制掺杂结构的低温光致荧光

The results of photolumenescence measurements of modulation doped GaAs/N-AlGaAs 2DEG at 4.2 K are reported. They show that the photolumenescence method can be used as a diagnostic means for determing the quality of 2DEG materials. The features of the spectra have some correlation with electronic properties of 2DEG and provide some possibilities for improving MBE technology.