FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON
n-GaAs表面全息光栅的形成及表面等离振子电磁耦子发光测定

The method to produce diffraction gratings by H2O2-H2SO4 photo-accelerated etching on the surface of n-GaAs and measuring of light emission by surface pla smon polariton from an Ag/n-GaAs Schottky barrier diode are discussed in this paper.