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物理学报  1992 

INFLUENCE OF CHEMICAL ETCHING AND SULFIDE TREATMENT ON InSb(111) SURFACES
化学腐蚀和硫处理对InSb(111)表面的影响

Keywords: 锑化铟,半导体,化学腐蚀,硫处理

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Abstract:

The chemical etched and (NH4)2S-treated InSb(lll) surfaces have been studied using Auger electron spectroscopy and X-ray phctoelectron spectroscopy. It is found that after etching in the CP-4 solution the InSb surfaces are covered by a native oxide overlayer in which the amounts of Sb oxide are obviously more than In oxide. The native oxide layer on the InSb surfaces is completely removed by sulfide treatment and then a sulfide passivation layer forms on the sample surfaces.

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