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物理学报 1992
STUDIES OF INTERNAL STRESS IN DIAMOND FILMS PREPA-RED BY DC PLASMA CHEMICAL VAPOUR DEPOSITION
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Abstract:
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and micristructure with voids.