Optimized design of 4H-SiC floating junction power Schottky barrier diodes
浮结型碳化硅肖特基势垒功率二极管的优化设计

SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with opti-mized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 m? cm2.