Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers
光电化学刻蚀法在整个5英寸硅片上制作均匀深孔阵列

We analyze the two main factors causing non-uniformity of the etched macropore array first, and then a novel photoelectrochemical etching setup for large area silicon wafers is described. This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator. Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup. The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.