High quality p-type ZnO film growth by a simple method and its properties

P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6 · 2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400°C, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm 3, resistivity of 0.04706 Ω · cm and Hall mobility of 259 cm2/(V · s); they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was transformed from p-type to n-type conduction.