%0 Journal Article
%T Optimizing Thin-Film Solar Cell Performance: A Comparative Numerical Analysis of GaAsN, GaInAsN and GaInAsNSb-Based Structures Using SCAPS-1D
%A Zamil Sultan
%A Sakib Rahman Chowdhury
%A Momotaj Jahan
%A Abir Reza
%J Energy and Power Engineering
%P 107-133
%@ 1947-3818
%D 2025
%I Scientific Research Publishing
%R 10.4236/epe.2025.176006
%X This research examines the performances of thin-film solar cells utilizing three dilute nitrides based novel absorber layer&#8217;s materials GaAsN, GaInAsN, and GaInAsNSb, modeled through SCAPS-1D. Comparative analyses evaluated the effects of absorber layer composition, doping densities, thickness variations, and operating temperature on critical photovoltaic parameters, including short-circuit current density (J<sub>sc</sub>), open-circuit voltage (V<sub>oc</sub>), fill factor (FF), efficiency (<i>&#951;</i>), and quantum efficiency (QE). In this study, GaInAsN-based solar cell (Cell 2) demonstrated the highest efficiency (34.7%) and short-circuit current density (46.8 mA/cm<sup>2</sup>), while GaAsN (Cell 1) shown reduced performance with J<sub>sc</sub> and efficiency reaching maxima of 33.8 mA/cm<sup>2</sup> and 30.6%, respectively. These two cell&#8217;s efficiency is better than that of GaAs-based solar cell reported previously. Thus, it is concluded that dilute nitrides based structure is better for photovoltaic application and further addition of indium atoms (In) into dilute nitrides played a vital role on the crystallographic, electrical and optical properties in GaInAsN for producing better performance. The third cell (Cell 3) based on GaInAsNSb exhibited a peak efficiency of 31.6%; however, it did not achieve the same levels of J<sub>sc</sub> and efficiency as Cell 2 but Cell 1. It seems that the combined effect of In and Sb atoms in GaInAsNSb mitigates the efficiency. Simulations on the proposed structures revealed that Cell 2 maintained superior performance across a range of absorber thicknesses, doping concentrations, and temperatures, showcasing its robustness and adaptability. Cell 3 exhibited better stability compared to Cell 1, especially under diverse environmental conditions. Furthermore, Cell 2 demonstrated larger quantum efficiency in the visible and near-infrared wavelengths, indicating its suitability for high-efficiency photovoltaic applications. This research&#8217;s findings obtained by simulation would be highly advantageous for further experimental verification in order to advance photonics-based nanotechnology and renewable energy, which would help to reduce greenhouse gas emissions and the world&#8217;s energy crises simultaneously and sustainably.
%K Thin-Flim Solar Cell
%K GaAs
%K GaAsN
%K GaInAsN
%K GaInAsNSb
%K Efficiency
%K Dilute Nitrides
%K Quantum Efficiency
%K Comparative Analysis
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=143452