%0 Journal Article
%T 基于532 nm半导体激光拒止器系统设计与实验研究
Design and Experimental Research of 532 nm Semiconductor Laser Rejection System
%A 朱小勇
%A 王頔
%A 叶文镇
%A 张翠恒
%J Journal of Sensor Technology and Application
%P 242-255
%@ 2331-0243
%D 2025
%I Hans Publishing
%R 10.12677/jsta.2025.133024
%X 针对非致命激光拒止需求，本文设计了一种基于532 nm半导体激光器的自适应拒止系统。该系统通过激光测距模块实时获取目标距离，结合人眼安全标准(MPE/NOHD)动态调节激光输出功率(0.5~3 W)及发散角(1~10 mrad)，确保目标位置激光功率密度稳定在0.1~2.55 mW∙cm−2的安全范围内。硬件上采用STM32F103ZET6微控制器为核心，集成脉冲激光测距模块(精度±1 m)、变焦光学系统及PWM调制驱动电路；软件上实现闭环控制算法，支持自动参数调整与人机交互。实验结果表明，系统在10~400 m范围内可精确控制到靶功率密度(误差 < 30%)，具备非致命眩目效果。本研究为激光拒止技术的工程化应用提供了理论依据与技术支撑。
In order to meet the requirements of non-lethal laser rejection, an adaptive rejection system based on 532 nm semiconductor laser is designed. The system obtains the target distance in real time through the laser ranging module, and dynamically adjusts the laser output power (0.5~3 W) and divergence angle (1~10 mrad) in combination with the human eye safety standard (MPE/NOHD) to ensure that the laser power density at the target position is stable within the safe range of 0.1~2.55 mW∙cm−2. The hardware adopts STM32F103ZET6 microcontroller as the core, and integrates a pulsed laser ranging module (accuracy ±1 m), a zoom optical system and a PWM modulation driver circuit. The closed-loop control algorithm is implemented in the software, and automatic parameter adjustment and human-computer interaction are supported. The experimental results show that the system can accurately control the target power density in the range of 10~400 m (error < 30%), and has a non-lethal dazzling effect. This study provides a theoretical basis and technical support for the engineering application of laser rejection technology.
%K 激光拒止器，
%K 532 nm半导体激光器，
%K 自动变焦，
%K 激光测距，
%K 非致命武器
Laser Rejector
%K 532 nm Semiconductor Laser
%K Auto Zoom
%K Laser Ranging
%K Non-Lethal Weapons
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=113827